Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220

Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220

Manufacturer:
Manufacturer Part No:
IPP60R099P6XKSA1
Enrgtech Part No:
ET16793380
Warranty:
Manufacturer
$ 3.44 $ 3.44
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
37.9A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-220
Series:
CoolMOS P6
Mount Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance Rds:
99mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
278W
Typical Gate Charge Qg @ Vgs:
70nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
150°C
Width:
4.57 mm
Standards/Approvals:
No
Length:
10.36mm
Height:
15.95mm
Automotive Standard:
No
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0900766b81560dc7.pdf(datasheets)
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0900766b81644fb3.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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