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ipb320n20n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-263
ipb320n20n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-263
ipb320n20n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-263

Infineon OptiMOS 3 Type N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-263

Infineon OptiMOS 3 Type N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-263

Manufacturer:
Infineon
Manufacturer Part No:
IPB320N20N3GATMA1
Enrgtech Part No:
ET16793142
Warranty:
Manufacturer
$ 1.56 $ 1.56
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
34A
Maximum Drain Source Voltage Vds:
200V
Series:
OptiMOS 3
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
32mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
22nC
Maximum Power Dissipation Pd:
136W
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Width:
4.5 x 3.2 x 1.02mm
Length:
10.31mm
Standards/Approvals:
No
Height:
4.57mm
Automotive Standard:
No
pdf icon
0900766b81538262.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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