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ipb117n20nfdatma1 Infineon OptiMOS FD Type N-Channel MOSFET, 84 A, 200 V Enhancement, 3-Pin TO-263 IPB117N20NFDATMA1
ipb117n20nfdatma1 Infineon OptiMOS FD Type N-Channel MOSFET, 84 A, 200 V Enhancement, 3-Pin TO-263 IPB117N20NFDATMA1
ipb117n20nfdatma1 Infineon OptiMOS FD Type N-Channel MOSFET, 84 A, 200 V Enhancement, 3-Pin TO-263 IPB117N20NFDATMA1

Infineon OptiMOS FD Type N-Channel MOSFET, 84 A, 200 V Enhancement, 3-Pin TO-263 IPB117N20NFDATMA1

Infineon OptiMOS FD Type N-Channel MOSFET, 84 A, 200 V Enhancement, 3-Pin TO-263 IPB117N20NFDATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB117N20NFDATMA1
Enrgtech Part No:
ET16793130
Warranty:
Manufacturer
$ 2.67 $ 2.67
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
84A
Maximum Drain Source Voltage Vds:
200V
Series:
OptiMOS FD
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
11.7mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
0.8 nC @ 10 V
Maximum Power Dissipation Pd:
300W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
170°C
Length:
10.31mm
Height:
4.57mm
Standards/Approvals:
IEC61249-2-21, JEDEC, Pb-free lead plating, RoHS
Width:
4.5 x 3.2 x 1.02mm
Automotive Standard:
No
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0900766b814d67c0.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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