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ipb027n10n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263
ipb027n10n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263
ipb027n10n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263

Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263

Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263

Manufacturer:
Infineon
Manufacturer Part No:
IPB027N10N3GATMA1
Enrgtech Part No:
ET16793104
Warranty:
Manufacturer
$ 2.54 $ 2.54
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
120A
Maximum Drain Source Voltage Vds:
100V
Series:
OptiMOS 3
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
4.5mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
300W
Forward Voltage Vf:
1V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
155nC
Maximum Operating Temperature:
175°C
Length:
10.31mm
Height:
4.57mm
Width:
4.5 x 3.2 x 1.02mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b813299d2.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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