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ipb017n06n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 180 A, 60 V Enhancement, 7-Pin TO-263
ipb017n06n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 180 A, 60 V Enhancement, 7-Pin TO-263

Infineon OptiMOS 3 Type N-Channel MOSFET, 180 A, 60 V Enhancement, 7-Pin TO-263

Infineon OptiMOS 3 Type N-Channel MOSFET, 180 A, 60 V Enhancement, 7-Pin TO-263

Manufacturer:
Infineon
Manufacturer Part No:
IPB017N06N3GATMA1
Enrgtech Part No:
ET16793097
Warranty:
Manufacturer
$ 1.77 $ 1.77
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
180A
Maximum Drain Source Voltage Vds:
60V
Series:
OptiMOS 3
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
1.7mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
250W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
206nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Length:
10.31mm
Standards/Approvals:
No
Height:
4.57mm
Width:
4.5 x 3.2 x 1.02mm
Automotive Standard:
No
pdf icon
0900766b810908dd.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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