Infineon SIPMOS Type P-Channel MOSFET, 330 mA, 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1

Infineon SIPMOS Type P-Channel MOSFET, 330 mA, 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1

Manufacturer:
Manufacturer Part No:
BSS83PH6327XTSA1
Enrgtech Part No:
ET16792591
Warranty:
Manufacturer
$ 0.25 $ 0.25
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
330mA
Maximum Drain Source Voltage Vds:
60V
Series:
499Ω
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
2.38nC
Maximum Power Dissipation Pd:
360mW
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
-1.1V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
1.3 mm
Height:
1mm
Length:
2.9mm
Automotive Standard:
AEC-Q101
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0900766b810740ec.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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