Infineon OptiMOS 3 Type N-Channel MOSFET, 3.2 A, 60 V Enhancement, 4-Pin SOT-89 BSS606NH6327XTSA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 3.2 A, 60 V Enhancement, 4-Pin SOT-89 BSS606NH6327XTSA1

Manufacturer:
Manufacturer Part No:
BSS606NH6327XTSA1
Enrgtech Part No:
ET16792587
Warranty:
Manufacturer
$ 0.46 $ 0.46
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
3.2A
Maximum Drain Source Voltage Vds:
60V
Series:
OptiMOS 3
Package Type:
SOT-89
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
90mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
3.7nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
1W
Forward Voltage Vf:
1.1V
Maximum Operating Temperature:
150°C
Length:
4.5mm
Standards/Approvals:
No
Height:
1.5mm
Width:
2.5 mm
Distrelec Product Id:
304-36-979
Automotive Standard:
AEC-Q101
pdf icon
0900766b814d5dce.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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