Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin SOT-23

Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin SOT-23

Manufacturer:
Manufacturer Part No:
BSS316NH6327XTSA1
Enrgtech Part No:
ET16792586
Warranty:
Manufacturer
$ 0.16 $ 0.16
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
1.4A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOT-23
Series:
OptiMOS 2
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
280mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
500mW
Forward Voltage Vf:
0.8V
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
0.6nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Length:
2.9mm
Standards/Approvals:
No
Width:
1.3 mm
Height:
0.9mm
Automotive Standard:
AEC-Q101
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0900766b8132f05d.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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