Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89 BSS192PH6327FTSA1

Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89 BSS192PH6327FTSA1

Manufacturer:
Manufacturer Part No:
BSS192PH6327FTSA1
Enrgtech Part No:
ET16792578
Warranty:
Manufacturer
$ 0.41 $ 0.41
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
190mA
Maximum Drain Source Voltage Vds:
250V
Package Type:
SOT-89
Series:
499Ω
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
20Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
-1.1V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
4.9nC
Maximum Power Dissipation Pd:
1W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
1.5mm
Length:
4.5mm
Width:
2.5 mm
Automotive Standard:
AEC-Q101
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0900766b8107404b.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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