Infineon SIPMOS Type N-Channel MOSFET, 2.9 A, 60 V Enhancement, 3-Pin SOT-223 BSP320SH6327XTSA1

Infineon SIPMOS Type N-Channel MOSFET, 2.9 A, 60 V Enhancement, 3-Pin SOT-223 BSP320SH6327XTSA1

Manufacturer:
Manufacturer Part No:
BSP320SH6327XTSA1
Enrgtech Part No:
ET16792542
Warranty:
Manufacturer
$ 0.75 $ 0.75
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
2.9A
Maximum Drain Source Voltage Vds:
60V
Series:
499Ω
Package Type:
SOT-223
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
120mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
9.7nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
1.8W
Forward Voltage Vf:
0.95V
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Height:
1.6mm
Width:
3.5 mm
Length:
6.5mm
Automotive Standard:
AEC-Q101
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0900766b81074032.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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