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bsp295h6327xtsa1 Infineon SIPMOS® N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 BSP295H6327XTSA1
bsp295h6327xtsa1 Infineon SIPMOS® N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 BSP295H6327XTSA1

Infineon SIPMOS® N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 BSP295H6327XTSA1

Infineon SIPMOS® N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 BSP295H6327XTSA1

Manufacturer:
Infineon
Manufacturer Part No:
BSP295H6327XTSA1
Enrgtech Part No:
ET16792538
Warranty:
Manufacturer
$ 0.32 $ 0.32
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
1.8 A
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-223
Series:
SIPMOS®
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
300 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2V
Minimum Gate Threshold Voltage:
0.8V
Maximum Power Dissipation:
1.8 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Number of Elements per Chip:
1
Transistor Material:
Si
Typical Gate Charge @ Vgs:
14 nC @ 10 V
Length:
6.5mm
Width:
3.5mm
Maximum Operating Temperature:
+150 °C
Height:
1.6mm
Minimum Operating Temperature:
-55 °C
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0900766b81538256.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
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0900766b812bb6e4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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