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bsp171ph6327xtsa1 Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223
bsp171ph6327xtsa1 Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223
bsp171ph6327xtsa1 Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223

Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223

Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223

Manufacturer:
Infineon
Manufacturer Part No:
BSP171PH6327XTSA1
Enrgtech Part No:
ET16792537
Warranty:
Manufacturer
$ 0.27 $ 0.27
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
1.9A
Maximum Drain Source Voltage Vds:
60V
Series:
499Ω
Package Type:
SOT-223
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
300mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
-1.1V
Typical Gate Charge Qg @ Vgs:
ROX3S
Maximum Power Dissipation Pd:
1.8W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Length:
6.5mm
Height:
1.6mm
Width:
3.5 mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
pdf icon
0900766b8153824f.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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