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bsp149h6327xtsa1 Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Depletion, 4-Pin SOT-223
bsp149h6327xtsa1 Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Depletion, 4-Pin SOT-223
bsp149h6327xtsa1 Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Depletion, 4-Pin SOT-223
bsp149h6327xtsa1 Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Depletion, 4-Pin SOT-223

Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Depletion, 4-Pin SOT-223

Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Depletion, 4-Pin SOT-223

Manufacturer:
Infineon
Manufacturer Part No:
BSP149H6327XTSA1
Enrgtech Part No:
ET16792535
Warranty:
Manufacturer
$ 0.44 $ 0.44
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
660mA
Maximum Drain Source Voltage Vds:
200V
Series:
499Ω
Package Type:
SOT-223
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
1.8Ω
Channel Mode:
Depletion
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
11nC
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
1.8W
Maximum Operating Temperature:
150°C
Height:
1.6mm
Width:
3.5 mm
Standards/Approvals:
No
Length:
6.5mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b81538252.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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