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bsd235nh6327xtsa1 Infineon OptiMOS™ 2 Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1
bsd235nh6327xtsa1 Infineon OptiMOS™ 2 Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1

Infineon OptiMOS™ 2 Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1

Infineon OptiMOS™ 2 Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1

Manufacturer:
Infineon
Manufacturer Part No:
BSD235NH6327XTSA1
Enrgtech Part No:
ET16792507
Warranty:
Manufacturer
$ 0.18 $ 0.18
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
950 mA
Maximum Drain Source Voltage:
20 V
Series:
OptiMOS™ 2
Package Type:
SOT-363
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
600 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
1.2V
Minimum Gate Threshold Voltage:
0.7V
Maximum Power Dissipation:
500 mW
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-12 V, +12 V
Length:
2mm
Typical Gate Charge @ Vgs:
0.32 nC @ 4.5 V
Maximum Operating Temperature:
+150 °C
Width:
1.25mm
Transistor Material:
Si
Number of Elements per Chip:
2
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
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0900766b8132f021.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
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A700000009705654.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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