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sir668dp-t1-re3 Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8
sir668dp-t1-re3 Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8

Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8

Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8

Manufacturer:
Vishay
Manufacturer Part No:
SIR668DP-T1-RE3
Enrgtech Part No:
ET16723704
Warranty:
Manufacturer
$ 1.32 $ 1.32
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
65A
Maximum Drain Source Voltage Vds:
100V
Package Type:
SO-8
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
5.05mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
72nC
Maximum Power Dissipation Pd:
104W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.1V
Maximum Operating Temperature:
150°C
Width:
5.26 mm
Length:
6.25mm
Height:
1.12mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b815a7419.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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