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sihg30n60e-ge3 Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247
sihg30n60e-ge3 Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247
sihg30n60e-ge3 Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247

Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247

Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247

Manufacturer:
Vishay
Manufacturer Part No:
SIHG30N60E-GE3
Enrgtech Part No:
ET16723689
Warranty:
Manufacturer
$ 4.86 $ 4.86
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
29A
Maximum Drain Source Voltage Vds:
600V
Series:
E
Package Type:
TO-247
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
125mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
85nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
250W
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
150°C
Length:
15.87mm
Standards/Approvals:
No
Width:
5.31 mm
Height:
20.82mm
Automotive Standard:
No
pdf icon
0900766b8126ced4.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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