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si7288dp-t1-ge3 Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin SO-8 SI7288DP-T1-GE3
si7288dp-t1-ge3 Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin SO-8 SI7288DP-T1-GE3

Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin SO-8 SI7288DP-T1-GE3

Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin SO-8 SI7288DP-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI7288DP-T1-GE3
Enrgtech Part No:
ET16723672
Warranty:
Manufacturer
$ 0.56 $ 0.56
Checking for live stock
Channel Type:
Type N
Product Type:
Power MOSFET
Maximum Continuous Drain Current Id:
20A
Maximum Drain Source Voltage Vds:
40V
Series:
TrenchFET
Package Type:
SO-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
22mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
150°C
Typical Gate Charge Qg @ Vgs:
WR-MPC3
Maximum Power Dissipation Pd:
15.6W
Maximum Gate Source Voltage Vgs:
20 V
Transistor Configuration:
Isolated
Maximum Operating Temperature:
-55°C
Length:
5.99mm
Width:
5 mm
Height:
1.07mm
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b81300cce.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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