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si2365eds-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23
si2365eds-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23

Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23

Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23

Manufacturer:
Vishay
Manufacturer Part No:
SI2365EDS-T1-GE3
Enrgtech Part No:
ET16723654
Warranty:
Manufacturer
$ 0.06 $ 0.06
Checking for live stock
Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
5.9A
Maximum Drain Source Voltage Vds:
20V
Series:
TrenchFET
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
0.0675Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
1.7W
Minimum Operating Temperature:
-50°C
Typical Gate Charge Qg @ Vgs:
13.8nC
Forward Voltage Vf:
-0.8V
Maximum Gate Source Voltage Vgs:
8 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Length:
3.04mm
Height:
1.02mm
Width:
1.4 mm
Automotive Standard:
No
pdf icon
0900766b81300c45.pdf(datasheets)
pdf icon
0900766b81644fb3.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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