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si2325ds-t1-e3 Vishay Si2325DS Type P-Channel MOSFET, 530 mA, 150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3
si2325ds-t1-e3 Vishay Si2325DS Type P-Channel MOSFET, 530 mA, 150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3
si2325ds-t1-e3 Vishay Si2325DS Type P-Channel MOSFET, 530 mA, 150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3

Vishay Si2325DS Type P-Channel MOSFET, 530 mA, 150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3

Vishay Si2325DS Type P-Channel MOSFET, 530 mA, 150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3

Manufacturer:
Vishay
Manufacturer Part No:
SI2325DS-T1-E3
Enrgtech Part No:
ET16723650
Warranty:
Manufacturer
$ 1.17 $ 1.17
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
530mA
Maximum Drain Source Voltage Vds:
150V
Package Type:
SOT-23
Series:
Si2325DS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.2Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
7.7nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
750mW
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
-1.2V
Maximum Operating Temperature:
150°C
Length:
3.04mm
Width:
1.4 mm
Height:
1.02mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b80ed1e9b.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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