Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252

Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252

Manufacturer:
Manufacturer Part No:
IRFR5410TRPBF
Enrgtech Part No:
ET14141864
Warranty:
Manufacturer
$ 0.47 $ 0.47
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
13A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-252
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
CCS Contact Cleaning Strips
Channel Mode:
Enhancement
Forward Voltage Vf:
-1.6V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
Edge Connector, Low Voltage Contact, Non-wiping Contact, Relays
Typical Gate Charge Qg @ Vgs:
20 pcs
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Height:
2.39mm
Width:
6.22 mm
Length:
6.73mm
Standards/Approvals:
No
Automotive Standard:
No
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0900766b8132f506.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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