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si4840bdy-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC SI4840BDY-T1-GE3
si4840bdy-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC SI4840BDY-T1-GE3
si4840bdy-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC SI4840BDY-T1-GE3

Vishay TrenchFET Type N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC SI4840BDY-T1-GE3

Vishay TrenchFET Type N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC SI4840BDY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI4840BDY-T1-GE3
Enrgtech Part No:
ET14131466
Warranty:
Manufacturer
$ 0.47 $ 0.47
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
19A
Maximum Drain Source Voltage Vds:
40V
Series:
TrenchFET
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.012Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
3 x 1 x 2mm
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
6W
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Operating Temperature:
150°C
Length:
5mm
Height:
1.55mm
Standards/Approvals:
RoHS, JEDEC JS709A, Halogen Free (IEC 61249-2-21)
Width:
4 mm
Automotive Standard:
No
pdf icon
0900766b80ed1f00.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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