Infineon HEXFETPower MOSFET Type N-Channel MOSFET, 353 A, 24 V Enhancement, 3-Pin TO-220AB IRF1324PBF

Infineon HEXFETPower MOSFET Type N-Channel MOSFET, 353 A, 24 V Enhancement, 3-Pin TO-220AB IRF1324PBF

Manufacturer:
Manufacturer Part No:
IRF1324PBF
Enrgtech Part No:
ET14113806
Warranty:
Manufacturer
$ 1.21 $ 1.21
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
353A
Maximum Drain Source Voltage Vds:
24V
Package Type:
TO-220AB
Series:
HEXFETPower MOSFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.5mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
160nC
Maximum Gate Source Voltage Vgs:
±20 V
Forward Voltage Vf:
1.3V
Maximum Power Dissipation Pd:
300W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Width:
EH Connector Housing
Standards/Approvals:
No
Height:
9.02mm
Length:
10.67mm
Automotive Standard:
No
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0900766b80dcacb9.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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