Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V Enhancement, 3-Pin TO-252 IRLR3636TRPBF

Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V Enhancement, 3-Pin TO-252 IRLR3636TRPBF

Manufacturer:
Manufacturer Part No:
IRLR3636TRPBF
Enrgtech Part No:
ET14089563
Warranty:
Manufacturer
$ 1.35 $ 1.35
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
99A
Maximum Drain Source Voltage Vds:
60V
Series:
HEXFET
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
8.3mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
49nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
16 V
Maximum Power Dissipation Pd:
143W
Maximum Operating Temperature:
175°C
Length:
6.73mm
Height:
2.39mm
Standards/Approvals:
No
Width:
6.22 mm
Automotive Standard:
No
pdf icon
0900766b8133abc7.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews