Infineon HEXFET Type N-Channel MOSFET, 160 A, 60 V Enhancement, 3-Pin TO-220 IRFB3306PBF

Infineon HEXFET Type N-Channel MOSFET, 160 A, 60 V Enhancement, 3-Pin TO-220 IRFB3306PBF

Manufacturer:
Manufacturer Part No:
IRFB3306PBF
Enrgtech Part No:
ET14089486
Warranty:
Manufacturer
$ 1.75 $ 1.75
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
160A
Maximum Drain Source Voltage Vds:
60V
Series:
HEXFET
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
4mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
85nC
Maximum Power Dissipation Pd:
230W
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Height:
9.02mm
Width:
4.82 mm
Length:
10.66mm
Standards/Approvals:
No
Automotive Standard:
No
Distrelec Product Id:
304-35-443
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0900766b8138492e.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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