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sis415dnt-t1-ge3 Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3
sis415dnt-t1-ge3 Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3

Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3

Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIS415DNT-T1-GE3
Enrgtech Part No:
ET14080558
Warranty:
Manufacturer
$ 0.72 $ 0.72
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
35A
Maximum Drain Source Voltage Vds:
20V
Package Type:
PowerPAK 1212-8
Series:
TrenchFET Gen III
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.0095Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
12 V
Forward Voltage Vf:
1.1V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
52W
Typical Gate Charge Qg @ Vgs:
55.5nC
Maximum Operating Temperature:
150°C
Length:
3.4mm
Width:
3.4 mm
Standards/Approvals:
RoHS
Height:
0.8mm
Automotive Standard:
No
pdf icon
0900766b813011ee.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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