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sihg47n60e-ge3 Vishay E Type N-Channel MOSFET, 47 A, 600 V Enhancement, 3-Pin TO-247 SiHG47N60E-GE3
sihg47n60e-ge3 Vishay E Type N-Channel MOSFET, 47 A, 600 V Enhancement, 3-Pin TO-247 SiHG47N60E-GE3
sihg47n60e-ge3 Vishay E Type N-Channel MOSFET, 47 A, 600 V Enhancement, 3-Pin TO-247 SiHG47N60E-GE3

Vishay E Type N-Channel MOSFET, 47 A, 600 V Enhancement, 3-Pin TO-247 SiHG47N60E-GE3

Vishay E Type N-Channel MOSFET, 47 A, 600 V Enhancement, 3-Pin TO-247 SiHG47N60E-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SiHG47N60E-GE3
Enrgtech Part No:
ET14080549
Warranty:
Manufacturer
$ 9.63 $ 9.63
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
47A
Maximum Drain Source Voltage Vds:
600V
Series:
E
Package Type:
TO-247
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
64mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
357W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
147nC
Maximum Operating Temperature:
150°C
Length:
15.87mm
Height:
20.7mm
Width:
5.31 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b8129da17.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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