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irlr2705trpbf Infineon HEXFET Type N-Channel MOSFET, 28 A, 55 V Enhancement, 3-Pin TO-252
irlr2705trpbf Infineon HEXFET Type N-Channel MOSFET, 28 A, 55 V Enhancement, 3-Pin TO-252
irlr2705trpbf Infineon HEXFET Type N-Channel MOSFET, 28 A, 55 V Enhancement, 3-Pin TO-252

Infineon HEXFET Type N-Channel MOSFET, 28 A, 55 V Enhancement, 3-Pin TO-252

Infineon HEXFET Type N-Channel MOSFET, 28 A, 55 V Enhancement, 3-Pin TO-252

Manufacturer:
Infineon
Manufacturer Part No:
IRLR2705TRPBF
Enrgtech Part No:
ET14041513
Warranty:
Manufacturer
$ 0.28 $ 0.28
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
28A
Maximum Drain Source Voltage Vds:
55V
Series:
HEXFET
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
50 Vrms ac/dc
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
25nC
Maximum Power Dissipation Pd:
68W
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
16 V
Maximum Operating Temperature:
175°C
Width:
6.22 mm
Height:
2.39mm
Length:
6.73mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b814b805a.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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