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irfb3307zpbf Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220
irfb3307zpbf Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220

Manufacturer:
Infineon
Manufacturer Part No:
IRFB3307ZPBF
Enrgtech Part No:
ET14041435
Warranty:
Manufacturer
$ 1.95 $ 1.95
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
120A
Maximum Drain Source Voltage Vds:
75V
Package Type:
TO-220
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
6mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
79nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
230W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Width:
4.82 mm
Standards/Approvals:
No
Height:
9.02mm
Length:
10.66mm
Automotive Standard:
No
pdf icon
0900766b814a9f64.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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