Infineon Isolated HEXFET 2 Type N, Type P-Channel MOSFET, 4 A, 30 V Enhancement, 8-Pin SOIC

Infineon Isolated HEXFET 2 Type N, Type P-Channel MOSFET, 4 A, 30 V Enhancement, 8-Pin SOIC

Manufacturer:
Manufacturer Part No:
IRF7309TRPBF
Enrgtech Part No:
ET14041422
Warranty:
Manufacturer
$ 0.29 $ 0.29
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Channel Type:
Type N, Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
4A
Maximum Drain Source Voltage Vds:
30V
Series:
HEXFET
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
80mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
1.4W
Typical Gate Charge Qg @ Vgs:
16.7nC
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1V
Maximum Operating Temperature:
150°C
Transistor Configuration:
Isolated
Length:
5mm
Width:
4 mm
Height:
1.5mm
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
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0900766b8132ef6d.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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