Infineon HEXFET Type N-Channel Power MOSFET, 75 A, 75 V Enhancement, 3-Pin TO-263 IRF2807ZSTRLPBF

Infineon HEXFET Type N-Channel Power MOSFET, 75 A, 75 V Enhancement, 3-Pin TO-263 IRF2807ZSTRLPBF

Manufacturer:
Manufacturer Part No:
IRF2807ZSTRLPBF
Enrgtech Part No:
ET14041409
Warranty:
Manufacturer
$ 2.20 $ 2.20
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Channel Type:
Type N
Product Type:
Power MOSFET
Maximum Continuous Drain Current Id:
75A
Maximum Drain Source Voltage Vds:
75V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
9.4mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
300W
Maximum Gate Source Voltage Vgs:
±20 V
Typical Gate Charge Qg @ Vgs:
71nC
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Width:
9.65 mm
Length:
10.67mm
Height:
4.83mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b813418bb.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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