Infineon HEXFET Type N-Channel MOSFET, 100 A, 75 V Enhancement, 3-Pin TO-263 IRF1407STRLPBF

Infineon HEXFET Type N-Channel MOSFET, 100 A, 75 V Enhancement, 3-Pin TO-263 IRF1407STRLPBF

Manufacturer:
Manufacturer Part No:
IRF1407STRLPBF
Enrgtech Part No:
ET14041407
Warranty:
Manufacturer
$ 2.28 $ 2.28
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
100A
Maximum Drain Source Voltage Vds:
75V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
7mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
200W
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
160nC
Maximum Operating Temperature:
175°C
Height:
9.65mm
Length:
10.67mm
Standards/Approvals:
No
Width:
EH Connector Housing
Automotive Standard:
No
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0900766b8147753a.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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