Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-220

Manufacturer:
Manufacturer Part No:
IRF1010EZPBF
Enrgtech Part No:
ET14041405
Warranty:
Manufacturer
$ 0.69 $ 0.69
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
84A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-220
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
8.5mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
140W
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
20 pcs
Maximum Operating Temperature:
175°C
Width:
EH Connector Housing
Length:
10.67mm
Standards/Approvals:
No
Height:
16.51mm
Automotive Standard:
No
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0900766b813418b7.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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