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bss806neh6327xtsa1 Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23
bss806neh6327xtsa1 Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23

Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23

Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23

Manufacturer:
Infineon
Manufacturer Part No:
BSS806NEH6327XTSA1
Enrgtech Part No:
ET14041286
Warranty:
Manufacturer
$ 0.11 $ 0.11
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
2.3A
Maximum Drain Source Voltage Vds:
20V
Series:
OptiMOS 2
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
82mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
500mW
Maximum Gate Source Voltage Vgs:
8 V
Typical Gate Charge Qg @ Vgs:
1.7nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
0.82V
Maximum Operating Temperature:
150°C
Length:
2.9mm
Standards/Approvals:
No
Width:
1.3 mm
Height:
1mm
Distrelec Product Id:
304-44-429
Automotive Standard:
AEC-Q101
pdf icon
0900766b8132f066.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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