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sia449dj-t1-ge3 Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3
sia449dj-t1-ge3 Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3

Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3

Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIA449DJ-T1-GE3
Enrgtech Part No:
ET14031698
Warranty:
Manufacturer
$ 0.45 $ 0.45
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Product Type:
Power MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
12A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOT-363
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
0.038Ω
Channel Mode:
Enhancement
Forward Voltage Vf:
-0.8V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
23.1nC
Maximum Gate Source Voltage Vgs:
12 V
Maximum Power Dissipation Pd:
19W
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Height:
0.8mm
Length:
2.15mm
Width:
2.15 mm
Automotive Standard:
No
pdf icon
0900766b81300d3e.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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