Channel Type:
Type P
Product Type:
Power MOSFET
Maximum Continuous Drain Current Id:
5.8A
Maximum Drain Source Voltage Vds:
40V
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
45mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
150°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
2.14W
Typical Gate Charge Qg @ Vgs:
Ladder
Forward Voltage Vf:
-0.7V
Maximum Operating Temperature:
-55°C
Transistor Configuration:
Isolated
Length:
4.95mm
Height:
1.5mm
Width:
3.95 mm
Standards/Approvals:
MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, J-STD-020
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q100, AEC-Q101, AEC-Q200
