Infineon HEXFET Type N-Channel MOSFET, 6.5 A, 20 V Enhancement, 6-Pin Micro6 IRLMS2002TRPBF

Infineon HEXFET Type N-Channel MOSFET, 6.5 A, 20 V Enhancement, 6-Pin Micro6 IRLMS2002TRPBF

Manufacturer:
Manufacturer Part No:
IRLMS2002TRPBF
Enrgtech Part No:
ET13987844
Warranty:
Manufacturer
$ 0.42 $ 0.42
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
6.5A
Maximum Drain Source Voltage Vds:
20V
Package Type:
Micro6
Series:
HEXFET
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
45mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
15nC
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
2W
Maximum Gate Source Voltage Vgs:
12 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
3mm
Width:
1.75 mm
Height:
1.3mm
Automotive Standard:
No
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0900766b8133abbc.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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