Infineon HEXFET Type P-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-252

Infineon HEXFET Type P-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-252

Manufacturer:
Manufacturer Part No:
IRFR5505TRPBF
Enrgtech Part No:
ET13987778
Warranty:
Manufacturer
$ 0.41 $ 0.41
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
18A
Maximum Drain Source Voltage Vds:
55V
Series:
HEXFET
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
110mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
57W
Forward Voltage Vf:
-1.6V
Typical Gate Charge Qg @ Vgs:
32nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Width:
6.22 mm
Height:
2.39mm
Standards/Approvals:
No
Length:
6.73mm
Automotive Standard:
No
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0900766b814b8039.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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