Infineon HEXFET Type N-Channel MOSFET, 200 A, 60 V Enhancement, 3-Pin TO-247 IRFP3206PBF

Infineon HEXFET Type N-Channel MOSFET, 200 A, 60 V Enhancement, 3-Pin TO-247 IRFP3206PBF

Manufacturer:
Manufacturer Part No:
IRFP3206PBF
Enrgtech Part No:
ET13987764
Warranty:
Manufacturer
$ 3.56 $ 3.56
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
200A
Maximum Drain Source Voltage Vds:
60V
Series:
HEXFET
Package Type:
TO-247
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
3mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
280W
Typical Gate Charge Qg @ Vgs:
120nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Length:
15.87mm
Standards/Approvals:
No
Width:
5.31 mm
Height:
20.7mm
Distrelec Product Id:
304-35-445
Automotive Standard:
No
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0900766b80dcb1d2.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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