Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 8-Pin SOIC

Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 8-Pin SOIC

Manufacturer:
Manufacturer Part No:
IRF7104TRPBF
Enrgtech Part No:
ET13987716
Warranty:
Manufacturer
$ 0.56 $ 0.56
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
2.3A
Maximum Drain Source Voltage Vds:
20V
Package Type:
SOIC
Series:
HEXFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
400mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
12 V
Maximum Power Dissipation Pd:
2W
Forward Voltage Vf:
-1.2V
Typical Gate Charge Qg @ Vgs:
9.3nC
Maximum Operating Temperature:
150°C
Transistor Configuration:
Isolated
Length:
5mm
Standards/Approvals:
No
Width:
4 mm
Height:
1.5mm
Number of Elements per Chip:
2
Automotive Standard:
No
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0900766b813418d1.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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