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sihb28n60ef-ge3 Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3
sihb28n60ef-ge3 Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3
sihb28n60ef-ge3 Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3

Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3

Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SiHB28N60EF-GE3
Enrgtech Part No:
ET13977417
Warranty:
Manufacturer
$ 7.01 $ 7.01
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
28A
Maximum Drain Source Voltage Vds:
600V
Package Type:
TO-263
Series:
EF
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
123mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
250W
Typical Gate Charge Qg @ Vgs:
80nC
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
4.83mm
Length:
10.67mm
Width:
9.65 mm
Automotive Standard:
No
pdf icon
0900766b8145c11a.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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