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zxmc3a16dn8ta DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 6.4 A, 30 V Enhancement, 8-Pin SOIC ZXMC3A16DN8TA
zxmc3a16dn8ta DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 6.4 A, 30 V Enhancement, 8-Pin SOIC ZXMC3A16DN8TA
zxmc3a16dn8ta DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 6.4 A, 30 V Enhancement, 8-Pin SOIC ZXMC3A16DN8TA

DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 6.4 A, 30 V Enhancement, 8-Pin SOIC ZXMC3A16DN8TA

DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 6.4 A, 30 V Enhancement, 8-Pin SOIC ZXMC3A16DN8TA

Manufacturer:
DiodesZetex
Manufacturer Part No:
ZXMC3A16DN8TA
Enrgtech Part No:
ET13950781
Warranty:
Manufacturer
$ 1.30 $ 1.30
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Product Type:
Power MOSFET
Channel Type:
Type P, Type N
Maximum Continuous Drain Current Id:
6.4A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
50mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.85V
Typical Gate Charge Qg @ Vgs:
3 x 3 x 0.75mm
Minimum Operating Temperature:
150°C
Maximum Power Dissipation Pd:
2.1W
Maximum Operating Temperature:
-55°C
Transistor Configuration:
Isolated
Length:
5mm
Standards/Approvals:
RoHS, J-STD-020, UL 94V-0, AEC-Q101, MIL-STD-202
Width:
4 mm
Height:
1.5mm
Number of Elements per Chip:
2
Automotive Standard:
No
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0900766b81151e54.pdf(datasheets)
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0900766b8154d5c3.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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