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dmn6070ssd-13 DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.1 A, 60 V Enhancement, 8-Pin SOIC DMN6070SSD-13
dmn6070ssd-13 DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.1 A, 60 V Enhancement, 8-Pin SOIC DMN6070SSD-13
dmn6070ssd-13 DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.1 A, 60 V Enhancement, 8-Pin SOIC DMN6070SSD-13

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.1 A, 60 V Enhancement, 8-Pin SOIC DMN6070SSD-13

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.1 A, 60 V Enhancement, 8-Pin SOIC DMN6070SSD-13

Manufacturer:
DiodesZetex
Manufacturer Part No:
DMN6070SSD-13
Enrgtech Part No:
ET13950642
Warranty:
Manufacturer
$ 0.26 $ 0.26
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Channel Type:
Type N
Product Type:
Power MOSFET
Maximum Continuous Drain Current Id:
4.1A
Maximum Drain Source Voltage Vds:
60V
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
100mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
5.6nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
1.5W
Minimum Operating Temperature:
150°C
Forward Voltage Vf:
305V ac
Maximum Operating Temperature:
-55°C
Transistor Configuration:
Isolated
Standards/Approvals:
J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202
Width:
3.95 mm
Height:
1.5mm
Length:
4.95mm
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
0900766b81332224.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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