Product Type:
Power MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
580mA
Maximum Drain Source Voltage Vds:
60V
Package Type:
1.65mm
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
4Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
980mW
Typical Gate Charge Qg @ Vgs:
304nC
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.8V
Minimum Operating Temperature:
150°C
Transistor Configuration:
Isolated
Maximum Operating Temperature:
-55°C
Height:
1.3mm
Width:
1.7 mm
Length:
3.1mm
Standards/Approvals:
J-STD-020, MIL-STD-202, RoHS, AEC-Q101, UL 94V-0
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q200, AEC-Q101, AEC-Q100
