Infineon HEXFET Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 4-Pin SOT-223 IRFL4105TRPBF

Infineon HEXFET Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 4-Pin SOT-223 IRFL4105TRPBF

Manufacturer:
Manufacturer Part No:
IRFL4105TRPBF
Enrgtech Part No:
ET13933233
Warranty:
Manufacturer
$ 0.51 $ 0.51
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
5.2A
Maximum Drain Source Voltage Vds:
55V
Package Type:
SOT-223
Series:
HEXFET
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
45mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
3.2 x 4.5mm
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
2.1W
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
150°C
Length:
6.7mm
Width:
3.7 mm
Height:
1.8mm
Standards/Approvals:
No
Automotive Standard:
No
Distrelec Product Id:
304-44-458
pdf icon
0900766b8132f4ee.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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