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irfb38n20dpbf Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF
irfb38n20dpbf Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF
irfb38n20dpbf Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF

Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF

Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRFB38N20DPBF
Enrgtech Part No:
ET13933220
Warranty:
Manufacturer
$ 2.70 $ 2.70
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
43A
Maximum Drain Source Voltage Vds:
200V
Series:
HEXFET
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
54mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.5V
Typical Gate Charge Qg @ Vgs:
60nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
300W
Maximum Operating Temperature:
175°C
Height:
16.51mm
Standards/Approvals:
No
Length:
10.67mm
Width:
4.69 mm
Automotive Standard:
No
pdf icon
0900766b8132f4e1.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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