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irf640nstrlpbf Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRF640NSTRLPBF
irf640nstrlpbf Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRF640NSTRLPBF
irf640nstrlpbf Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRF640NSTRLPBF

Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRF640NSTRLPBF

Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRF640NSTRLPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRF640NSTRLPBF
Enrgtech Part No:
ET13933199
Warranty:
Manufacturer
$ 0.95 $ 0.95
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
18A
Maximum Drain Source Voltage Vds:
200V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
150mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
150W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
67nC
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Length:
10.67mm
Width:
9.65 mm
Height:
4.83mm
Automotive Standard:
No
Distrelec Product Id:
304-44-448
pdf icon
0900766b813418ce.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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