Infineon HEXFET Type N-Channel MOSFET, 600 mA, 200 V Enhancement, 6-Pin TSOP IRF5801TRPBF

Infineon HEXFET Type N-Channel MOSFET, 600 mA, 200 V Enhancement, 6-Pin TSOP IRF5801TRPBF

Manufacturer:
Manufacturer Part No:
IRF5801TRPBF
Enrgtech Part No:
ET13933196
Warranty:
Manufacturer
$ 0.35 $ 0.35
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
600mA
Maximum Drain Source Voltage Vds:
200V
Series:
HEXFET
Package Type:
TSOP
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
2.2Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
2W
Typical Gate Charge Qg @ Vgs:
3.9nC
Forward Voltage Vf:
1.3V
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
0.9mm
Length:
3mm
Width:
1.5 mm
Distrelec Product Id:
304-36-986
Automotive Standard:
No
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0900766b80af6393.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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