Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220 IRF3205ZPBF

Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220 IRF3205ZPBF

Manufacturer:
Manufacturer Part No:
IRF3205ZPBF
Enrgtech Part No:
ET13933189
Warranty:
Manufacturer
$ 1.21 $ 1.21
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
110A
Maximum Drain Source Voltage Vds:
55V
Series:
HEXFET
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
7mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.3V
Maximum Power Dissipation Pd:
170W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
Flexicap
Maximum Operating Temperature:
175°C
Length:
10.54mm
Width:
4.69 mm
Standards/Approvals:
No
Height:
8.77mm
Automotive Standard:
No
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0900766b814a9f5a.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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