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irf1018epbf Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V Enhancement, 3-Pin TO-220
irf1018epbf Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V Enhancement, 3-Pin TO-220

Manufacturer:
Infineon
Manufacturer Part No:
IRF1018EPBF
Enrgtech Part No:
ET13933177
Warranty:
Manufacturer
$ 0.89 $ 0.89
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
79A
Maximum Drain Source Voltage Vds:
60V
Series:
HEXFET
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
8mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
46nC
Forward Voltage Vf:
1.3V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
110W
Maximum Operating Temperature:
175°C
Length:
10.67mm
Width:
EH Connector Housing
Standards/Approvals:
No
Height:
9.02mm
Distrelec Product Id:
304-43-449
Automotive Standard:
No
pdf icon
0900766b80dcacb8.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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