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siss23dn-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3
siss23dn-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SISS23DN-T1-GE3
Enrgtech Part No:
ET13923059
Warranty:
Manufacturer
$ 0.58 $ 0.58
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
27A
Maximum Drain Source Voltage Vds:
20V
Series:
TrenchFET
Package Type:
PowerPAK 1212
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
EIA Class II
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
57W
Maximum Gate Source Voltage Vgs:
8 V
Forward Voltage Vf:
-0.8V
Typical Gate Charge Qg @ Vgs:
195nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Height:
0.78mm
Length:
3.3mm
Standards/Approvals:
No
Width:
3.3 mm
Automotive Standard:
No
pdf icon
0900766b813011f2.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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